5 papers
Confinement drives valley splitting above 4K in buried silicon quantum wells
Davide Degli Esposti, Emma Catherine Brann, Asser Elsayed +3
Controlling the energy scales of a quantum system is essential for defining robust qubits. In silicon spin qubits, the nearly degenerate conduction-band valleys create a leakage ch…
The effects of alloy disorder on strongly-driven flopping mode qubits in Si/SiGe
Merritt P. R. Losert, Utkan Güngördü, S. N. Coppersmith +2
In Si quantum dot systems, large magnetic field gradients are needed to implement spin rotations via electric dipole spin resonance (EDSR). By increasing the effective electron dip…
Valley Splitting Correlations Across a Silicon Quantum Well Containing Germanium
Jonathan C. Marcks, Emily Eagen, Emma C. Brann +12
Quantum dots in SiGe/Si/SiGe heterostructures host coherent electron spin qubits, which are promising for future quantum computers. The silicon quantum well hosts near-degenerate e…
Bayesian and geometric analyses of power spectral densities of spin qubits in Si/SiGe quantum dot devices
Yujun Choi, Hruday Mallubhotla, Mark Friesen +2
Charge noise with a power-law spectrum poses a significant challenge to high-fidelity operation of spin qubits in semiconductor devices. Recently, considerable experimental work ch…
Engineering Ge profiles in Si/SiGe heterostructures for increased valley splitting
Lucas E. A. Stehouwer, Merrit P. Losert, Maia Rigot +6
Electron spin qubits in Si/SiGe quantum wells are limited by the small and variable energy separation of the conduction band valleys. While sharp quantum well interfaces are pursue…