Meeting the Scaling Challenge for Post-Silicon Nanoelectronics using CaF2 Insulators

Yury Yu. Illarionov, Alexander G. Banshchikov, Dmitry K. Polyushkin +10

Two-dimensional (2D) semiconductors have been suggested both for ultimately-scaled field-effect transistors (FETs) and More-than-Moore nanoelectronics. However, these targets can n…