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physics.app-ph2023
Variability and Reliability of Graphene Field-Effect Transistors with CaF2 Insulators
Yury Yu. Illarionov, Theresia Knobloch, Burkay Uzlu +11
Graphene is a promising material for applications as a channel in graphene field-effect transistors (GFETs) which may be used as a building block for optoelectronics, high-frequenc…
physics.app-ph2020
On the suitability of hBN as an insulator for 2D material-based ultrascaled CMOS devices
Theresia Knobloch, Yury Yu. Illarionov, Fabian Ducry +8
Complementary metal oxide semiconductor (CMOS) logic circuits at the ultimate scaling limit place the utmost demands on the properties of all materials involved. The requirements f…
physics.app-ph2019
Meeting the Scaling Challenge for Post-Silicon Nanoelectronics using CaF2 Insulators
Yury Yu. Illarionov, Alexander G. Banshchikov, Dmitry K. Polyushkin +10
Two-dimensional (2D) semiconductors have been suggested both for ultimately-scaled field-effect transistors (FETs) and More-than-Moore nanoelectronics. However, these targets can n…