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Field emission from AlGaN nanowires with low turn-on field
Filippo Giubileo, Antonio Di Bartolomeo, Yun Zhong +2
We fabricate AlGaN nanowires by molecular beam epitaxy and we investigate their field emission properties by means of an experimental setup using nano-manipulated tungsten tips as…
Vacuum gauge from ultrathin MoS2 transistor
A. Di Bartolomeo, A. Pelella, A. Grillo +5
We fabricate monolayer MoS2 field effect transistors and study their electric characteristics from 10^-6 Torr to atmospheric air pressure. We show that the threshold voltage of the…
Temperature and gate effects on contact resistance and mobility in graphene transistors by TLM and Y-function methods
Francesca Urban, Grzegorz Lupina, Alessandro Grillo +2
The metal-graphene contact resistance is one of the major limiting factors toward the technological exploitation of graphene in electronic devices and sensors. A high contact resis…