3 papers
quant-ph2026
Efficient formation and identification of single emitters in 4H-SiC following maskless heavy ion implantation
S. Eserin, L. K. S. Zimmermann, E. Schneider +12
Single photon emitters in silicon carbide (SiC) are a leading platform for scalable quantum technologies. Recent interest has focused on oxygen-vacancy-related emitters, which show…
cond-mat.mtrl-sci2025
Enhanced Secondary Electron Detection of Single Ion Implants in Silicon Through Thin SiO2 Layers
Ella B Schneider, Oscar G Lloyd-Willard, Kristian Stockbridge +7
Deterministic placement of single dopants is essential for scalable quantum devices based on group-V donors in silicon. We demonstrate a non-destructive, high-efficiency method for…
quant-ph2019
Optically Controlled Entangling Gates in Randomly Doped Silicon
Eleanor Crane, Thomas Crane, Nguyen H. Le +2
Randomly-doped silicon has many competitive advantages for quantum computation; not only is it fast to fabricate but it could naturally contain high numbers of qubits and logic gat…