2 citations · 2 across the 1 of their papers we have counts for
2 papers
cond-mat.mes-hall2019★ 2 cited
Islanding, growth mode and ordering in Si heteroepitaxy on Ge(001) substrates structured by thermal annealing
L. Persichetti, M. Fanfoni, B. Bonanni +5
Si/Ge heteroepitaxial dots under tensile strain are grown on nanostructured Ge substrates produced by high-temperature flash heating exploiting the spontaneous faceting of the Ge(0…
cond-mat.mtrl-sci2018
Formation of extended thermal etch pits on annealed Ge wafers
L. Persichetti, M. Fanfoni, M. De Seta +4
An extended formation of faceted pit-like defects on Ge(001) and Ge(111) wafers was obtained by thermal cycles to T> 750 °C. This temperature range is relevant in many surface-prep…