activity
20192026
collaborators

5 papers

cond-mat.str-el2026

Improved selector behavior in ultrathin chromium-doped VO films

Johannes Mohr, Tyler Hennen, Yudi Wang +6

Devices based on the negative differential resistance effect in chromium doped VO are considered to be promising as selector elements for use in emerging memory technologie…

cond-mat.str-el2024

Electronic vs. phononic thermal transport in Cr-doped V2O3 thin films across the Mott transition

Johannes Mohr, Kiumars Aryana, Md. Rafiqul Islam +5

Understanding the thermal conductivity of chromium doped V2O3 is crucial for optimizing the design of selectors for memory and neuromorphic devices. We utilized the time-domain the…

cond-mat.str-el2024

Bulk-like Mott-Transition in ultrathin Cr-doped V2O3 films and the influence of its variability on scaled devices

Johannes Mohr, Tyler Hennen, Daniel Bedau +2

The pressure driven Mott-transition in Chromium doped V2O3 films is investigated by direct electrical measurements on polycrystalline films with thicknesses down to 10 nm, and dopi…

cond-mat.mtrl-sci2022

Fabrication of highly resistive NiO thin films for nanoelectronic applications

Johannes Mohr, Tyler Hennen, Daniel Bedau +3

Thin films of the prototypical charge transfer insulator NiO appear to be a promising material for novel nanoelectronic devices. The fabrication of the material is challenging howe…

cond-mat.mtrl-sci2019

Design of materials properties and device performance in memristive systems

Michael Lübben, Felix Cüppers, Johannes Mohr +5

Future development of the modern nanoelectronics and its flagships internet of things and artificial intelligence as well as many related applications is largely associated with me…