88 citations · 106 across the 9 of their papers we have counts for
9 papers
Solution gate control of shallow silicon vacancy charge states in diamond
Charlie Pattinson, Daniel J. McCloskey, Nikolai Dontschuk +3
Silicon-vacancy (SiV) centers in diamond combine near-infrared emission with solid-state robustness, but their performance hinges on isolating favorable defect charge states. We de…
Photoelectric detection of single spins in diamond by optically controlled discharge of long-lived trap states
A. C. Ulibarri, D. J. McCloskey, D. Wang +3
Electrical detection methods for solid-state spins are attractive for quantum technologies, being readily chip-scalable and not subject to the small photon budgets of single emitte…
Robust quantification of the diamond nitrogen-vacancy center charge state via photoluminescence spectroscopy
Giannis Thalassinos, Daniel J. McCloskey, Alessandro Mameli +7
Nitrogen vacancy (NV) centers in diamond are at the heart of many emerging quantum technologies, all of which require control over the NV charge state. Hence, methods for quantific…
Quantum electrometry of non-volatile space charges in diamond
R. M. Goldblatt, N. Dontschuk, D. J. McCloskey +2
The microscopic electric environment surrounding a spin defect in a wide-bandgap semiconductor plays a determining role in the spin coherence and charge stability of a given qubit…
Impact of surface treatments on the electron affinity of nitrogen-doped ultrananocrystalline diamond
Andre Chambers, Daniel J. McCloskey, Nikolai Dontschuk +5
In recent years, various forms of nanocrystalline diamond (NCD) have emerged as an attractive group of diamond/graphite mixed-phase materials for a range of applications from elect…
Methods for color center preserving hydrogen-termination of diamond
Daniel J. McCloskey, Daniel Roberts, Lila V. H. Rodgers +6
Chemical functionalization of diamond surfaces by hydrogen is an important method for controlling the charge state of near-surface fluorescent color centers, an essential process i…