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quant-ph2019★ 81 cited
Optical Properties of Vanadium in 4H Silicon Carbide for Quantum Technology
L. Spindlberger, A. Csóré, G. Thiering +7
We study the optical properties of tetravalent vanadium impurities in 4H silicon carbide (4H SiC). Emission from two crystalline sites is observed at wavelengths of 1.28 \mum and 1…
quant-ph2018★ 294 cited
High-fidelity spin and optical control of single silicon vacancy centres in silicon carbide
Roland Nagy, Matthias Niethammer, Matthias Widmann +14
Optically interfaced spins in the solid promise scalable quantum networks. Robust and reliable optical properties have so far been restricted to systems with inversion symmetry. He…