most citedElectro-Oxidation of p-Silicon in Fluoride-Containing Electrolyte: A Physical Model for the Regime of Negative Differential Resistance

9 citations · 9 across the 1 of their papers we have counts for

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physics.chem-ph2019★ 9 cited

Electro-Oxidation of p-Silicon in Fluoride-Containing Electrolyte: A Physical Model for the Regime of Negative Differential Resistance

Munir Salman, Maximilian Patzauer, Dominique Koster +2

When Si is anodically oxidized in a fluoride containing electrolyte, an oxide layer is grown. Simultaneously, the layer is etched by the fluoride containing electrolyte. The result…