183 citations · 349 across the 6 of their papers we have counts for
6 papers
Material-realistic modelling of quantum many-body effects in a monolayer TMDC nanolaser device
Joel Buchgeister, Alexander Steinhoff, Daniel Erben +2
The efficient light-matter interaction in combination with the small volume occupied by monolayer transition-metal dichalcogenides (TMDCs) makes this material class a notable optio…
Optical nonlinearities in the excited carrier density of atomically thin transition metal dichalcogenides
Daniel Erben, Alexander Steinhoff, Michael Lorke +1
In atomically thin semiconductors based on transition metal dichalcogenides, photoexcitation can be used to generate high densities of electron-hole pairs. Due to optical nonlinear…
Twist Angle Dependent Interlayer Exciton Lifetimes in van der Waals Heterostructures
Junho Choi, Matthias Florian, Alexander Steinhoff +15
In van der Waals (vdW) heterostructures formed by stacking two monolayers of transition metal dichalcogenides, multiple exciton resonances with highly tunable properties are formed…
Quantum-dot-like states in molybdenum disulfide nanostructures due to the interplay of local surface wrinkling, strain, and dielectric confinement
Christian Carmesin, Michael Lorke, Matthias Florian +4
The observation of quantum light emission from atomically thin transition metal dichalcogenides has opened a new field of applications for these material systems. The corresponding…
Prospects and limitations of transition-metal dichalcogenide laser gain materials
Frederik Lohof, Alexander Steinhoff, Michael Lorke +4
Nanolasers operate with a minimal amount of active material and low losses. In this regime, single layers of transition-metal dichalcogenides (TMDs) are being investigated as next…
Excitation-induced transition to indirect band gaps in atomically thin transition metal dichalcogenide semiconductors
D. Erben, A. Steinhoff, G. Schönhoff +3
Monolayers of transition metal dichalcogenides (TMDCs) exhibit an exceptionally strong Coulomb interaction between charge carriers due to the two-dimensional carrier confinement in…