most citedImproved Thin Film Quality and Photoluminescence of N-Doped Epitaxial Germanium-on-Silicon using MOCVD

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cond-mat.mtrl-sci2019★ 1 cited

Improved Thin Film Quality and Photoluminescence of N-Doped Epitaxial Germanium-on-Silicon using MOCVD

Guangnan Zhou, Alejandra V. Cuervo Covian, Kwang Hong Lee +4

Ge-on-Si structures in-situ doped with phosphorus or arsenic via metal organic chemical vapor deposition (MOCVD) were investigated. Surface roughness, strain, threading dislocation…