Ananth Saran Yalamarthy

activity

20142019

most citedEffect of Geometry on Sensitivity and Offset of AlGaN/GaN and InAlN/GaN Hall-effect Sensors

35 citations · 36 across the 6 of their papers we have counts for

collaborators

Showing 2019Show all

2 papers · 1 filter

physics.app-ph2019

Stable Operation of AlGaN/GaN HEMTs at 400 $^{\circ}$ C in air for 25 hours

Saleh Kargarrazi, Ananth Saran Yalamarthy, Peter F. Satterthwaite +3

In this letter, we report the operation of AlGaN/GaN HEMTs with Pd gates in air over a wide temperature range from 22 $^{\circ}$ C to 500 $^{\circ}$ C. The variation in the threshold volta…

physics.ins-det2019

Gallium Nitride Photodetector Measurements of UV Emission from a Gaseous CH4/O2 Hybrid Rocket Igniter Plume

Hannah S. Alpert, Ananth Saran Yalamarthy, Peter F. Satterthwaite +6

Owing to its wide (3.4 eV) and direct-tunable band gap, gallium nitride (GaN) is an excellent material platform for UV photodetectors. GaN is also stable in radiation-rich and high…

Stable Operation of AlGaN/GaN HEMTs at 400∘C in air for 25 hours

Gallium Nitride Photodetector Measurements of UV Emission from a Gaseous CH4/O2 Hybrid Rocket Igniter Plume

Stable Operation of AlGaN/GaN HEMTs at 400 $^{\circ}$ C in air for 25 hours