activity
20172023
most citedLocalization landscape theory of disorder in semiconductors. III. Application to carrier transport and recombination in light emitting diodes

141 citations · 540 across the 9 of their papers we have counts for

collaborators

9 papers

cond-mat.mtrl-sci2023★ 5 cited

Numerical analysis and optimization of a hybrid layer structure for triplet-triplet fusion mechanism in organic light-emitting diodes

Jun-Yu Huang, Hsiao-Chun Hung, Kung-Chi Hsu +9

In this study, we develop a steady state and time-dependent exciton diffusion model including singlet and triplet excitons coupled with a modified Poisson and drift-diffusion solve…

cond-mat.mtrl-sci2023★ 7 cited

Studies of two-dimensional material resistive random-access memory by kinetic Monte Carlo simulations

Ying-Chuan Chen, Yu-Ting Chao, Edward Chen +2

Resistive memory based on 2D WS2, MoS2, and h-BN materials has been studied, including experiments and simulations. The influences with different active layer thicknesses have been…

physics.app-ph2021★ 39 cited

Efficiency and Forward Voltage of Blue and Green Lateral LEDs with V-shape defects and Random Alloy Fluctuation in Quantum Wells

Cheng-Han Ho, James S. Speck, Claude Weisbuch +1

For nitride-based blue and green light-emitting diodes (LEDs), the forward voltage is larger than expected, especially for green LEDs. This is mainly due to the larg…

cond-mat.mtrl-sci2021★ 44 cited

Influences of Dielectric Constant and Scan Rate to Hysteresis Effect in Perovskite Solar Cell: Simulation and Experimental Analyses

Jun-Yu Huang, You-Wei Yang, Wei-Hsuan Hsu +3

In this work, perovskite solar cells (PSCs) with different transport layers were fabricated to understand the hysteresis phenomenon under a series of scan rates. The experimental r…

physics.app-ph2021★ 29 cited

Three-dimensional modeling of minority-carrier lateral diffusion length including random alloy fluctuations in (In,Ga)N and (Al,Ga)N single quantum wells

Huan-Ting Shen, Claude Weisbuch, James S. Speck +1

For nitride-based InGaN and AlGaN quantum well (QW) LEDs, the potential fluctuations caused by natural alloy disorders limit the lateral intra-QW carrier diffusion length and curre…

quant-ph2019★ 27 cited

Hybrid classical-quantum linear solver using Noisy Intermediate-Scale Quantum machines

Chih-Chieh Chen, Shiue-Yuan Shiau, Ming-Feng Wu +1

We propose a realistic hybrid classical-quantum linear solver to solve systems of linear equations of a specific type, and demonstrate its feasibility using Qiskit on IBM Q systems…

cond-mat.mtrl-sci2017★ 141 cited

Localization landscape theory of disorder in semiconductors. III. Application to carrier transport and recombination in light emitting diodes

Chi-Kang Li, Marco Piccardo, Li-Shuo Lu +7

This paper introduces a novel method to account for quantum disorder effects into the classical drift-diffusion model of semiconductor transport through the localization landscape…

cond-mat.mtrl-sci2017★ 127 cited

Localization landscape theory of disorder in semiconductors II: Urbach tails of disordered quantum well layers

Marco Piccardo, Chi-Kang Li, Yuh-Renn Wu +7

Urbach tails in semiconductors are often associated to effects of compositional disorder. The Urbach tail observed in InGaN alloy quantum wells of solar cells and LEDs by biased ph…

cond-mat.mtrl-sci2017★ 121 cited

Localization landscape theory of disorder in semiconductors I: Theory and modeling

Marcel Filoche, Marco Piccardo, Yuh-Renn Wu +3

We present here a model of carrier distribution and transport in semiconductor alloys accounting for quantum localization effects in disordered materials. This model is based on th…