66 citations · 144 across the 8 of their papers we have counts for
8 papers
First-Principles Calculation of Alloy Scattering and n-type Mobility in Strained GeSn
Kevin Sewell, Felipe Murphy-Armando
We use first-principles electronic-structure theory to determine the intra- and inter-valley electron-alloy scattering parameters in n-type GeSn alloys. These parameters are used t…
Quantum spin Hall phase in GeSn heterostructures on silicon
B. M. Ferrari, F. Marcantonio, F. Murphy-Armando +2
Quantum phases of solid-state electron systems look poised to sustain exotic phenomena and a very rich spin physics. We propose a practical silicon-based architecture that spontane…
Enhancement of the electronic thermoelectric properties of bulk strained silicon-germanium alloys using the scattering relaxation times from first principles
F. Murphy-Armando
We use first-principles electronic structure methods to calculate the electronic thermoelectric properties (i.e. due to electronic transport only) of single-crystalline bulk -ty…
Evolution of non-thermal phonon and electron populations in photo-excited germanium on picosecond timescales
F. Murphy-Armando, É. D. Murray, I. Savić +3
We investigate from first-principles theory and experiment the generation of phonons on picosecond timescales and the relaxation of carriers in multiple conduction band valleys of…
Ultrafast relaxation of symmetry-breaking photo-induced atomic forces
Shane M. O'Mahony, Felipe Murphy-Armando, Éamonn D. Murray +3
We present a first-principles method for the calculation of the temperature-dependent relaxation of symmetry-breaking atomic driving forces in photoexcited systems. We calculate th…
Acoustic Deformation Potentials of -Type PbTe from First Principles
Aoife R. Murphy, Felipe Murphy-Armando, Stephen Fahy +1
We calculate the uniaxial and dilatation acoustic deformation potentials, and , of the conduction band L valleys of PbTe from first principles,…
Strain-induced effects on band-to-band tunnelling and trap-assisted tunnelling in Si examined by experiment and theory
Felipe Murphy-Armando, Chang Liu, Yi Zhao +1
Strain is commonly used in metal-oxide-semiconductor technologies to boost on-state performance. This booster has been in production for at least a decade. Despite this, a systemat…
Deformation Potentials and Electron-Phonon Coupling in Silicon Nanowires
F. Murphy-Armando, G. Fagas, J. C. Greer
The role of reduced dimensionality and of the surface on electron-phonon (e-ph) coupling in silicon nanowires is determined from first principles. Surface termination and chemistry…