33 citations · 107 across the 6 of their papers we have counts for
6 papers
A Roadmap for Controlled and Efficient n-type Doping of Self-assisted GaAs Nanowires Grown by Molecular Beam Epitaxy
Marta Orrù, Eva Repiso, Stefania Carapezzi +7
N-type doping of GaAs nanowires has proven to be difficult because the amphoteric character of silicon impurities is enhanced by the nanowire growth mechanism and growth conditions…
Reflectionless tunneling in planar Nb/GaAs hybrid junctions
Francesco Giazotto, Marco Cecchini, Pasqualantonio Pingue +5
Reflectionless-tunneling was observed in Nb/GaAs superconductor/semiconductor junctions fabricated through a two-step procedure. First, periodic -doped layers were grown by mole…
1.26 m intersubband transitions in InGaAs/AlAs quantum wells
Cesar Pascual Garcia, Andrea De Nardis, Vittorio Pellegrini +5
We observed room-temperature intersubband transitions at 1.26 microns in n-doped type-II InGaAs/AlAs strained quantum wells. An improved tight-binding model was use…
Polaronic Excitons in ZnCdSe/ZnSe Quantum Wells
A. De Nardis, V. Pellegrini, R. Colombelli +3
We present a detailed investigation of excitonic absorption in quantum wells under the application of a perpendicular magnetic field. The large energy s…
Andreev reflection in engineered Al/Si/InGaAs(001) junctions
S. De Franceschi, F. Giazotto, F. Beltram +3
Complete suppression of the native n-type Schottky barrier is demonstrated in Al/InGaAs(001) junctions grown by molecular-beam-epitaxy. This result was achieved by the insertion of…
Andreev reflection in Si-engineered Al/InGaAs hybrid junctions
Silvano De Franceschi, Francesco Giazotto, Fabio Beltram +3
Andreev-reflection dominated transport is demonstrated in Al/n-In0.38Ga0.62As superconductor-semiconductor junctions grown by molecular beam epitaxy on GaAs(001). High junction tra…