Cryogenic Subthreshold Swing Saturation in FD-SOI MOSFETs described with Band Broadening

H. Bohuslavskyi, A. G. M. Jansen, S. Barraud +13

In the standard MOSFET description of the drain current $I_D$ as a function of applied gate voltage $V_{GS}$, the subthreshold swing $SS(T)\equiv d{V}_{GS}/d\log I_D$ has a funda…