activity
20192026
most citedInterferometric 4D-STEM for Lattice Distortion and Interlayer Spacing Measurements in Bilayer and Trilayer Two-dimensional Materials

20 citations · 151 across the 13 of their papers we have counts for

collaborators

13 papers

cond-mat.mtrl-sci2026

Quantum Dot Moiré from Crossed MoS2 Nanoribbons

Xinting Shuai, Hao Zhang, Wenjing Wu +22

Twisted atomically thin layers have attracted much attention for Moiré potential and correlated quantum phenomena. However, existing Moiré superlattices have largely been limited t…

physics.app-ph2023★ 13 cited

Structural, optical, and thermal properties of BN thin films grown on diamond via pulsed laser deposition

Abhijit Biswas, Gustavo A. Alvarez, Tao Li +19

Heterostructures based on ultrawide-bandgap (UWBG) semiconductors (bandgap >4.0 eV), boron nitride (BN) and diamond are important for next-generation high-power electronics. Howeve…

cond-mat.mtrl-sci2023★ 16 cited

Phase Stability of Hexagonal/cubic Boron Nitride Nanocomposites

Abhijit Biswas, Rui Xu, Joyce Christiansen-Salameh +21

Boron nitride (BN) is an exceptional material and among its polymorphs, two-dimensional (2D) hexagonal and three-dimensional (3D) cubic BN (h-BN and c-BN) phases are most common. T…

cond-mat.mtrl-sci2023★ 16 cited

Non-linear optics at twist interfaces in h-BN/SiC heterostructures

Abhijit Biswas, Rui Xu, Gustavo A. Alvarez +24

Understanding the emergent electronic structure in twisted atomically thin layers has led to the exciting field of twistronics. However, practical applications of such systems are…

physics.app-ph2022★ 18 cited

Properties and device performance of BN thin films grown on GaN by pulsed laser deposition

Abhijit Biswas, Mingfei Xu, Kai Fu +18

Wide and ultrawide-bandgap semiconductors lie at the heart of next-generation high-power, high-frequency electronics. Here, we report the growth of ultrawide-bandgap boron nitride…

cond-mat.mtrl-sci2022★ 19 cited

Unidirectional domain growth of hexagonal boron nitride thin films

Abhijit Biswas, Qiyuan Ruan, Frank Lee +16

Two-dimensional van der Waals (2D-vdW) layered hexagonal boron nitride (h-BN) has gained tremendous research interest over recent years due to its unconventional domain growth morp…

physics.app-ph2022★ 20 cited

Unravelling the room temperature growth of two-dimensional h-BN nanosheets for multifunctional applications

Abhijit Biswas, Rishi Maiti, Frank Lee +21

Room temperature growth of two-dimensional van der Waals (2D-vdW) materials is indispensable for state-of-the-art nanotechnology. The low temperature growth supersedes the requirem…

cond-mat.mtrl-sci2022

High throughput data-driven design of laser crystallized 2D MoS2 chemical sensors

Drake Austin, Paige Miesle, Deanna Sessions +19

High throughput characterization and processing techniques are becoming increasingly necessary to navigate multivariable, data-driven design challenges for sensors and electronic d…

cond-mat.mtrl-sci2022★ 6 cited

Stability of Oxygenated Groups on Pristine and Defective Diamond Surfaces

Eliezer Oliveira, Chenxi Li, Xiang Zhang +11

The surface functionalization of diamond has been extensively studied through a variety of techniques, such as oxidation. Several oxygen groups have been correspondingly detected o…

cond-mat.mtrl-sci2021★ 10 cited

A Reactive Molecular Dynamics Study of Hydrogenation on Diamond Surfaces

Eliezer F. Oliveira, Mahesh R. Neupane, Chenxi Li +9

Hydrogenated diamond has been regarded as a promising material in electronic device applications, especially in field-effect transistors (FETs). However, the quality of diamond hyd…

cond-mat.mtrl-sci2020★ 20 cited

Interferometric 4D-STEM for Lattice Distortion and Interlayer Spacing Measurements in Bilayer and Trilayer Two-dimensional Materials

Michael J Zachman, Jacob Madsen, Xiang Zhang +3

Van der Waals materials composed of stacks of individual atomic layers have attracted considerable attention due to their exotic electronic properties that can be altered by, for e…

cond-mat.mtrl-sci2020

Simultaneous Observation of Carrier-Specific Redistribution and Coherent Lattice Dynamics in 2H-MoTe with Femtosecond Core-Level Spectroscopy

Andrew R. Attar, Hung-Tzu Chang, Alexander Britz +12

We employ few-femtosecond extreme ultraviolet (XUV) transient absorption spectroscopy to reveal simultaneously the intra- and interband carrier relaxation and the light-induced str…

cond-mat.mes-hall2019★ 13 cited

Thermal boundary conductance and phonon transmission in hexagonal boron nitride/graphene heterostructures

David B. Brown, Thomas L. Bougher, Xiang Zhang +3

Increased power density in modern microelectronics has led to thermal management challenges which can cause degradation in performance and reliability. In many high-power electroni…