activity
19992013
most citedScanning tunneling microscopy and spectroscopy at low temperatures of the (110) surface of Te doped GaAs single crystals

35 citations · 60 across the 7 of their papers we have counts for

collaborators

7 papers

cond-mat.mtrl-sci2013

In situ visualization of Ni-Nb bulk metallic glasses phase transition

A. I. Oreshkin, V. N. Mantsevich, S. V. Savinov +5

We report the results of the Ni-based bulk metallic glass structural evolution and crystallization behavior in situ investigation. The X-ray diffraction (XRD), transmission electro…

cond-mat.mes-hall2013

Tunneling spectroscopy of phosphorus impurity atom on Ge(111)-(2x1) surface. {Ab initio} study

S. V. Savinov, A. I. Oreshkin, S. I. Oreshkin

We have performed the numerical modeling of Ge(111)-(2x1) surface electronic properties in vicinity of P donor impurity atom located near the surface. We have found a notable incre…

cond-mat.mtrl-sci2012★ 15 cited

Noninvasive Embedding of Single Co Atoms in Ge(111)2x1 Surfaces

D. A. Muzychenko, K. Schouteden, M. Houssa +2

We report on a combined scanning tunneling microscopy (STM) and density functional theory (DFT) based investigation of Co atoms on Ge(111)2x1 surfaces. When deposited on cold surfa…

cond-mat.mtrl-sci2007★ 5 cited

Low-temperature scanning tunneling microscopy of ring-like surface electronic structures around Co islands on InAs(110) surfaces

D. A. Muzychenko, K. Schouteden, S. V. Savinov +3

We report on the experimental observation by scanning tunneling microscopy at low temperature of ring-like features that appear around Co metal clusters deposited on a clean (110)…

cond-mat2002★ 5 cited

Coulomb singularity effects in tunnelling spectroscopy of individual impurities

P. I. Arseyev, N. S. Maslova, V. I. Panov +1

Non-equilibrium Coulomb effects in resonant tunnelling processes through deep impurity states are analyzed. It is shown that Coulomb vertex corrections to the tunnelling transfer a…

cond-mat.mtrl-sci1999

Influence of resonant tunneling on the imaging of atomic defects on InAs(110) surfaces by low-temperature scanning tunneling microscopy

A. Depuydt, C. Van Haesendonck, N. S. Maslova +3

We have used a low-temperature scanning tunneling microscope (STM) to study the surface of heavily doped semiconductor InAs crystals. The crystals are cleaved in situ along the (11…