Influence of resonant tunneling on the imaging of atomic defects on InAs(110) surfaces by low-temperature scanning tunneling microscopy

A. Depuydt, C. Van Haesendonck, N. S. Maslova +3

We have used a low-temperature scanning tunneling microscope (STM) to study the surface of heavily doped semiconductor InAs crystals. The crystals are cleaved in situ along the (11…