2 papers
cond-mat.mes-hall1999
Lateral tunneling through the controlled barrier between edge channels in a two-dimentional electron system
A. A. Shashkin, V. T. Dolgopolov, E. V. Deviatov +5
We study the lateral tunneling through the gate-voltage-controlled barrier, which arises as a result of partial elimination of the donor layer of a heterostructure along a fine str…
cond-mat.mes-hall1998
Nanolithography by non-contact AFM induced local oxidation : Fabrication of tunneling barriers suitable for single electron devices
B. Irmer, M. Kehrle, H. Lorenz +1
We study local oxidation induced by dynamic atomic force microscopy (AFM), commonly called TappingMode AFM. This minimizes the field induced forces, which cause the tip to blunt, a…