54 citations · 196 across the 7 of their papers we have counts for
7 papers
Effect of Ge-doping on the short-wave, mid- and far-infrared intersubband transitions in GaN/AlGaN heterostructures
Caroline B. Lim, Akhil Ajay, Jonas Lähnemann +2
This paper assesses the effects of Ge-doping on the structural and optical (band-to-band and intersubband (ISB)) properties of GaN/AlGaN multi-quantum wells (QWs) designed to displ…
Effect of doping on the intersubband absorption in Si- and Ge-doped GaN/AlN heterostructures
A. Ajay, C. B. Lim, D. A. Browne +5
In this paper, we study band-to-band and intersubband characteristics of GaN/AlN heterostructures (planar and nanowires) structurally designed to absorb in the short-wavelength inf…
Ge doping of GaN beyond the Mott transition
A. Ajay, J. Schörmann, M. Jimenez-Rodriguez +9
We present a study of germanium as n-type dopant in wurtzite GaN films grown by plasma-assisted molecular beam epitaxy, reaching carrier concentrations of up to 6.7E20 cm-3 at 300K…
Atomically thin spherical shell-shaped superscatterers based on Bohr model
Rujiang Li, Xiao Lin, Shisheng Lin +2
Graphene monolayers can be used for atomically thin three-dimensional shell-shaped superscatterer designs. Due to the excitation of the first-order resonance of transverse magnetic…
Nonpolar m-plane GaN/AlGaN heterostructures with intersubband transitions in the 5 to 10 THz band
C. B. Lim, A. Ajay, C. Bougerol +6
This paper assesses intersubband transitions in the 1 to 10 THz frequency range in nonpolar m-plane GaN/AlGaN multi-quantum-wells deposited on free-standing semi-insulating GaN sub…
Intersubband transitions in nonpolar GaN/Al(Ga)N heterostructures in the short and mid-wavelength infrared regions
C. B. Lim, M. Beeler, A. Ajay +4
This paper assesses nonpolar m- and a-plane GaN/Al(Ga)N multi-quantum-wells grown on bulk GaN for intersubband optoelectronics in the short- and mid-wavelength infrared ranges. The…
Long-lived excitons in GaN/AlN nanowire heterostructures
M. Beeler, C. B. Lim, P. Hille +6
GaN/AlN nanowire heterostructures can display photoluminescence (PL) decay times on the order of microseconds that persist up to room temperature. Doping the GaN nanodisk insertion…