2 papers
cond-mat.mes-hall2020
Microscopic mechanism of van der Waals heteroepitaxy in the formation of MoS2/hBN vertical heterostructures
Mitsuhiro Okada, Mina Maruyama, Susumu Okada +9
Recent works have revealed that van der Waals (vdW) epitaxial growth of 2D materials on crystalline substrates, such as hexagonal boron nitride (hBN), leads to formation of self-al…
cond-mat.mes-hall2019
Indirect bandgap of hBN-encapsulated monolayer MoS2
Yosuke Uchiyama, Kenji Watanabe, Takashi Taniguchi +5
We present measurements of temperature dependence of photoluminescence intensity from monolayer MoS2 encapsulated by hexagonal boron nitride (hBN) flakes. The obtained temperature…