78 citations · 141 across the 13 of their papers we have counts for
13 papers
Near-half-metallic state in the half Heusler PtMnSb film on a III-V substrate
Shinichi Nishihaya, Malcolm J. A. Jardine, Hadass S. Inbar +9
The interplay between half-metallic ferromagnetism and spin-orbit coupling within the inversion symmetry-broken structure of half Heuslers provides an ideal platform for various sp…
Determining the bulk and surface electronic structure of -Sn/InSb(001) with spin- and angle-resolved photoemission spectroscopy
Aaron N. Engel, Paul J. Corbae, Hadass S. Inbar +9
The surface and bulk states in topological materials have shown promise in many applications. Grey or -Sn, the inversion symmetric analogue to HgTe, can exhibit a variety of the…
Strain Solitons in an Epitaxially Strained van der Waals-like Material
Jason T. Dong, Hadass S. Inbar, Connor P. Dempsey +2
Strain solitons are quasi-dislocations that form in van der Waals materials to relieve the energy associated with lattice or rotational mismatch in the crystal. Novel and unusual e…
Growth and characterization of -Sn thin films on In- and Sb-rich reconstructions of InSb(001)
Aaron N. Engel, Connor P. Dempsey, Hadass S. Inbar +7
-Sn thin films can exhibit a variety of topologically non-trivial phases. Both studying the transitions between these phases and making use of these phases in eventual applicati…
Electronic structure of InSb (001), (110), and (111)B surfaces
Jason T. Dong, Hadass S. Inbar, Mihir Pendharkar +4
The electronic structure of various (001), (110), and (111)B surfaces of n-type InSb were studied with scanning tunneling microscopy and spectroscopy. The InSb(111)B (3x1) surface…
Inversion Symmetry Breaking in Epitaxial Ultrathin Bi (111) Films
Hadass S. Inbar, Muhammad Zubair, Jason T. Dong +8
Bismuth (Bi) films hold potential for spintronic devices and topological one-dimensional edge transport. Large-area high-quality (111) Bi ultrathin films are grown on InSb (111)B s…
Tuning the Band Topology of GdSb by Epitaxial Strain
Hadass S. Inbar, Dai Q. Ho, Shouvik Chatterjee +12
Rare-earth monopnictide (RE-V) semimetal crystals subjected to hydrostatic pressure have shown interesting trends in magnetoresistance, magnetic ordering, and superconductivity, wi…
Defect engineering and Fermi-level tuning in half-Heusler topological semimetals
Shoaib Khalid, Hadass S. Inbar, Shouvik Chatterjee +2
Three-dimensional topological semimetals host a range of interesting quantum phenomena related to band crossing that give rise to Dirac or Weyl fermions, and can be potentially eng…
Epitaxial growth, magnetoresistance, and electronic band structure of GdSb magnetic semimetal films
Hadass S. Inbar, Dai Q. Ho, Shouvik Chatterjee +12
Motivated by observations of extreme magnetoresistance (XMR) in bulk crystals of rare-earth monopnictide (RE-V) compounds and emerging applications in novel spintronic and plasmoni…
Identifying the fingerprints of topological states by tuning magnetoresistance in a semimetal: the case of topological half-Heusler Pt1-xAuxLuSb
Shouvik Chatterjee, Felipe Crasto de Lima, John A. Logan +18
Topological materials often exhibit remarkably linear, non-saturating magnetoresistance (LMR), which is both of scientific and technological importance. However, the role of topolo…
Controlling magnetoresistance by tuning semimetallicity through dimensional confinement and heteroepitaxy
Shouvik Chatterjee, Shoaib Khalid, Hadass S. Inbar +7
Controlling the electronic properties via bandstructure engineering is at the heart of modern semiconductor devices. Here, we extend this concept to semimetals where, utilizing LuS…
Weak antilocalization in quasi-two-dimensional electronic states of epitaxial LuSb thin films
Shouvik Chatterjee, Shoaib Khalid, Hadass S. Inbar +10
Observation of large non-saturating magnetoresistance in rare-earth monopnictides has raised enormous interest in understanding the role of its electronic structure. Here, by a com…
Self-Aligned van der Waals Heterojunction Diodes and Transistors
Vinod K. Sangwan, Megan E. Beck, Alex Henning +7
A general self-aligned fabrication scheme is reported here for a diverse class of electronic devices based on van der Waals materials and heterojunctions. In particular, self-align…