42 citations · 47 across the 3 of their papers we have counts for
3 papers
Laser slicing: a thin film lift-off method for GaN-on-GaN technology
Vladislav Voronenkov, Natalia Bochkareva, Ruslan Gorbunov +6
A femtosecond laser focused inside bulk GaN was used to slice a thin GaN film with an epitaxial device structure from a bulk GaN substrate. The demonstrated laser slicing lift-off…
Thick GaN film stress-induced self-separation
Vladislav Voronenkov, Andrey Leonidov, Yuri Lelikov +2
Cracking of thick GaN films on sapphire substrates during the cooling down after the growth was studied. The cracking was suppressed by increasing the film-to-substrate thickness r…
Free-standing 2-inch bulk GaN crystal fabrication by HVPE using a carbon buffer layer
Vladislav Voronenkov, Andrey Leonidov, Natalia Bochkareva +6
A free-standing bulk gallium nitride layer with a thickness of 365 m and a diameter of 50 mm was obtained by hydride vapor phase epitaxy on a sapphire substrate with a carbon bu…