251 citations · 3.8k across the 84 of their papers we have counts for
9 papers · 1 filter
Electronic properties of type-II Weyl semimetal WTe. A review perspective
P. K. Das, D. Di Sante, F. Cilento +17
Currently, there is a flurry of research interest on materials with an unconventional electronic structure, and we have already seen significant progress in their understanding and…
Compelling experimental evidence of a Dirac cone in the electronic structure of a 2D Silicon layer
S. Sadeddine, H. Enriquez, A. Bendounan +7
The remarkable properties of graphene stem from its two-dimensional (2D) structure, with a linear dispersion of the electronic states at the corners of the Brillouin zone (BZ) form…
Bi monocrystal formation on InAs(111)A and B substrates
L. Nicolaï, J. -M. Mariot, U. Djukic +13
The growth of Bi films deposited on both A and B faces of InAs(111) has been investigated by low-energy electron diffraction, scanning tunneling microscopy, and photoelectron spect…
Strong Resonances of Quasi 1D Structures at the Bi/InAs(100) Surface
Olivier Heckmann, Maria Christine Richter, Jean-Michel Mariot +5
Thin Bi films are interesting candidates for spintronic applications due to a large spin-orbit splitting that, combined with the loss of inversion symmetry at the surface, results…
Domain formation mechanism of the Si(110)"16 x 2" reconstruction
N. K. Lewis, N. B. Clayburn, E. Brunkow +6
The main factor that determines which of the two domains form upon reconstruction of the Si(110)"16 x 2" surface has been investigated. LEED and STM images showed that the domain o…
A topological material in the III-V family: heteroepitaxial InBi on InAs
Laurent Nicolaï, Ján Minár, Maria Christine Richter +15
InBi(001) is formed epitaxially on InAs(111)-A by depositing Bi on to an In-rich surface. Angle-resolved photoemission measurements reveal topological electronic surface states, cl…