7 papers · 1 filter
Percolation-driven -relaxation enables resonant acceleration of crystallization in amorphous phase-change materials
Yu-Yao Liu, Liang Gao, Jun-Ying Jiang +9
Amorphous phase-change materials enable fast and reversible switching in optical and electronic devices, yet crystallization kinetics are still controlled primarily through empiric…
Atomistic understanding of two-dimensional monatomic phase-change material for non-volatile optical applications
Hanyi Zhang, Xueqi Xing, Jiang-Jing Wang +8
Elemental antimony (Sb) is a promising material for phase-change memory, neuromorphic computing and nanophotonic applications, because its compositional simplicity can prevent phas…
Amorphous phase-change memory alloy with no resistance drift
Xiaozhe Wang, Ruobing Wang, Suyang Sun +12
Spontaneous structural relaxation is intrinsic to glassy materials due to their metastable nature. For phase-change materials (PCMs), the resultant temporal change in electrical re…
Role of seed layer in growing atomically flat TiTe2/Sb2Te3 heterostructure thin films at the wafer scale
Chao Nie, Xueyang Shen, Junying Zhang +8
Chalcogenide phase-change materials (PCMs) are a leading candidate for advanced memory and computing applications. Epitaxial-like growth of chalcogenide thin films at the wafer sca…
Homopolar Chemical Bonds Induce In-Plane Anisotropy in Layered Semiconductors
Jieling Tan, Jiang-Jing Wang, Hang-Ming Zhang +6
Main-group layered binary semiconductors, in particular, the III-VI alloys in the binary Ga-Te system are attracting increasing interest for a range of practical applications. The…
Spin glass behavior in amorphous Cr2Ge2Te6 phase-change alloy
Xiaozhe Wang, Suyang Sun, Jiang-Jing Wang +8
The layered crystal structure of Cr2Ge2Te6 shows ferromagnetic ordering at the two-dimensional limit, which holds promise for spintronic applications. However, external voltage pul…