2 papers
cond-mat.mtrl-sci2019
Heteroepitaxial Thin-Film Growth of a Ternary Nitride Semiconductor CaZn2N2
Masatake Tsuji, Kota Hanzawa, Hiroyuki Kinjo +2
Zinc-based nitride CaZn2N2 films grown by molecular beam epitaxy (MBE) with a plasma-assisted active nitrogen-radical source are promising candidates of next-generation semiconduct…
cond-mat.mtrl-sci2019
Tunable light-emission through the range 1.8-3.2 eV and p-type conductivity at room temperature for nitride semiconductors, Ca(Mg1-xZnx)2N2 (x=0-1)
Masatake Tsuji, Hidenori Hiramatsu, Hideo Hosono
The ternary nitride CaZn2N2, composed only of earth-abundant elements, is a novel semiconductor with a band gap of 1.8 eV. First-principles calculations predict that continuous Mg…