activity
20192022
most citedAn empirical approach to measuring interface energies in mixed-phase bismuth ferrite

6 citations · 6 across the 5 of their papers we have counts for

collaborators

6 papers

cond-mat.mtrl-sci2022

Stability of ferroelectric bubble domains

Vivasha Govinden, Suyash Rijal, Qi Zhang +4

Nanoscale ferroelectric topologies such as vortices, anti-vortices, bubble patterns etc. are stabilized in thin films by a delicate balance of both mechanical and electrical bounda…

cond-mat.mes-hall2021

Valley population of donor states in highly strained silicon

B. Voisin, K. S. H. Ng, J. Salfi +13

Strain is extensively used to controllably tailor the electronic properties of materials. In the context of indirect band-gap semiconductors such as silicon, strain lifts the valle…

cond-mat.mtrl-sci20216 cited

An empirical approach to measuring interface energies in mixed-phase bismuth ferrite

Stuart R. Burns, Oliver Paull, Ralph Bulanadi +4

In complex oxide heteroepitaxy, strain engineering is a powerful tool to obtain phases in thin films that may be otherwise unstable in bulk. A successful example of this approach i…

cond-mat.mtrl-sci2021

Predicting nanocrystal morphology governed by interfacial strain

Hongwei Liu, Xuan Cheng, Nagarajan Valanoor

The shape dependence for the technologically important nickel oxide (NiO) nanocrystals on (001) strontium titanate substrates is investigated under the generalized Wulff-Kaichew (G…

cond-mat.mtrl-sci2021

Optical Tuning of Resistance Switching in Polycrystalline Gallium Phosphide Thin Films

Fran Kurnia, Jan Seidel, Judy N. Hart +1

The nanoscale resistive switching characteristics of gallium phosphide (GaP) thin films directly grown on Si are investigated as a function of incident light. Firstly, as-grown GaP…

cond-mat.mtrl-sci2019

Solution Processed Large-scale Multiferroic Complex Oxide Epitaxy with Magnetically Switched Polarization

Cong Liu, Feng An, Paria S. M. Gharavi +21

Complex oxides with tunable structures have many fascinating properties, though high-quality complex oxide epitaxy with precisely controlled composition is still out of reach. Here…