267 citations · 499 across the 21 of their papers we have counts for
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Super-ideal diodes at the Schottky-Mott limit in gated graphene-WSe heterojunctions
Samuel W. LaGasse, Prathamesh Dhakras, Takashi Taniguchi +2
Metal-semiconductor interfaces, known as Schottky junctions, have long been hindered by defects and impurities. Such imperfections dominate the electrical characteristics of the ju…
Atomic scale characterization of graphene p-n junctions for electron-optical applications
Xiaodong Zhou, Alexander Kerelsky, Mirza M. Elahi +8
Graphene p-n junctions offer a potentially powerful approach towards controlling electron trajectories via collimation and focusing in ballistic solid-state devices. The ability of…
Two-Parameter Quasi-Ballistic Transport Model for Nanoscale Transistors
Ramya Cuduvally, Prathamesh Dhakras, Phung Nguyen +2
We show that by adding only two fitting parameters to a purely ballistic transport model, we can accurately characterize the current-voltage characteristics of nanoscale MOSFETs. T…