13 citations · 21 across the 4 of their papers we have counts for
5 papers
Uniform large-area surface patterning achieved by metal dewetting for the top-down fabrication of GaN nanowire ensembles
Jingxuan Kang, Rose-Mary Jose, Miriam Oliva +6
The dewetting of thin Pt films on different surfaces is investigated as a means to provide the patterning for the top-down fabrication of GaN nanowire ensembles. The transformation…
Carrier Recombination in Highly Uniform and Phase-Pure GaAs/(Al,Ga)As Core/Shell Nanowire Arrays on Si(111): Mott Transition and Internal Quantum Efficiency
Miriam Oliva, Timur Flissikowski, Michał Góra +7
GaAs-based nanowires are among the most promising candidates for realizing a monolithical integration of III-V optoelectronics on the Si platform. To realize their full potential f…
A route for the top-down fabrication of ordered ultrathin GaN nanowires
Miriam Oliva, Vladimir Kaganer, Maximilian Pudelski +5
Ultrathin GaN nanowires (NWs) are attractive to maximize surface effects and as building block in high-frequency transistors. Here, we introduce a facile route for the top-down fab…
Density control of GaN nanowires at the wafer scale using self-assembled SiN patches on sputtered TiN(111)
Thomas Auzelle, Miriam Oliva, Philipp John +3
The self-assembly of heteroepitaxial GaN nanowires using either molecular beam epitaxy (MBE) or metal-organic vapor phase epitaxy (MOVPE) mostly results in wafer-scale ensembles wi…
Axial GaAs/Ga(As,Bi) Nanowire Heterostructures
Miriam Oliva, Guanhui Gao, Esperanza Luna +2
Bi-containing III-V semiconductors constitute an exciting class of metastable compounds with wide-ranging potential optoelectronic and electronic applications. However, the growth…