40 citations · 50 across the 3 of their papers we have counts for
3 papers
Geometrical magnetoresistance effect and mobility in graphene field-effect transistors
Isabel Harrysson Rodrigues, Andrey Generalov, Anamul Md Hoque +4
Further development of the graphene field-effect transistors (GFETs) for high-frequency electronics requires accurate evaluation and study of the mobility of charge carriers in a s…
On the Angular Dependence of InP High Electron Mobility Transistors for Cryogenic Low Noise Amplifiers in a Magnetic Field
Isabel Harrysson Rodrigues, David Niepce, Arsalan Pourkabirian +4
The InGaAs-InAlAs-InP high electron mobility transistor (InP HEMT) is the preferred active device used in a cryogenic low noise amplifier (LNA) for sensitive detection of microwave…
Origin and evolution of surface spin current in topological insulators
André Dankert, Priyamvada Bhaskar, Dmitrii Khokhriakov +6
The Dirac surface states of topological insulators offer a unique possibility for creating spin polarized charge currents due to the spin-momentum locking. Here we demonstrate that…