9 citations · 9 across the 2 of their papers we have counts for
2 papers
physics.app-ph2023
7.86 kV GaN-on-GaN PN Power Diode with BaTiO3 for Electrical Field Management
Yibo Xu, Vijay Gopal Thirupakuzi Vangipuram, Vishank Telasara +7
Device based on GaN have great potential for high power switching applications due to its high breakdown field and high electron mobility. In this work, we present the device desig…
cond-mat.mtrl-sci2019★ 9 cited
Velocity Saturation in La-doped BaSnO3 Thin Films
Hareesh Chandrasekar, Junao Cheng, Tianshi Wang +11
BaSnO_{3}, a high mobility perovskite oxide, is an attractive material for oxide-based electronic devices. However, in addition to low-field mobility, high-field transport properti…