16 citations · 36 across the 5 of their papers we have counts for
4 papers · 1 filter
Formation of Graphene atop a Si adlayer on the C-face of SiC
Jun Li, Qingxiao Wang, Guowei He +6
The structure of the SiC(000-1) surface, the C-face of the {0001} SiC surfaces, is studied as a function of temperature and of pressure in a gaseous environment of disilane (Si2H6)…
Substitutional mechanism for growth of hexagonal boron nitride on epitaxial graphene
Patrick C. Mende, Jun Li, Randall M. Feenstra
Monolayer-thick hexagonal boron nitride (h-BN) is grown on graphene on SiC(0001), by exposure of the graphene to borazine, (BH)3(NH)3, at 1100 C. The h-BN films form ~2-micrometer…
Magnitude of the Current in Two-Dimensional Interlayer Tunneling Devices
Randall M. Feenstra, Sergio C. de la Barrera, Jun Li +2
Using the Bardeen tunneling method with first-principles wave functions, computations are made of the tunneling current in graphene / hexagonal-boron-nitride / graphene (G/h-BN/G)…
Characteristics of Interlayer Tunneling Field Effect Transistors Computed by a "DFT-Bardeen" Method
Jun Li, Yifan Nie, Kyeongjae Cho +1
Theoretical predictions are made for the current-voltage characteristics of two-dimensional heterojunction interlayer tunneling field-effect transistors (Thin-TFETs), focusing on t…