Crystallization kinetics and role of stress in Al induced layer exchange crystallization process of amorphous SiGe thin film on glass

Twisha Sain, Ch. Kishan Singh, S. Ilango +1

The present study reports Al induced crystallization (AIC) of amorphous (a)-SiGe in Al-Ge-Si ternary system at low temperature ~ 350 degree C. In addition to crystallization, the i…