3 papers
cond-mat.mtrl-sci2022
Origin and Quantitative Description of the NESSIAS Effect at Si Nanostructures
Dirk König, Michael Frentzen, Daniel Hiller +9
The electronic structure of low nanoscale (LNS) intrinsic silicon (i-Si) embedded in SiO2 vs. Si3N4 shifts away from vs. towards the vacuum level Evac, as described by the Nanoscal…
cond-mat.mes-hall2019
Electronic Structure Shift of Deep Nanoscale Silicon by SiO- vs. SiN-Embedding as Alternative to Impurity Doping
Dirk König, Noël Wilck, Daniel Hiller +7
Conventional impurity doping of deep nanoscale silicon (dns-Si) used in ultra large scale integration (ULSI) faces serious challenges below the 14 nm technology node. We report on…
cond-mat.mtrl-sci2016
Modulation Doping of Silicon using Aluminium-induced Acceptor States in Silicon Dioxide
Dirk König, Daniel Hiller, Sebastian Gutsch +2
All electronic, optoelectronic or photovoltaic applications of silicon depend on controlling majority charge carriers via doping with impurity atoms. Nanoscale silicon is omniprese…