26 citations · 51 across the 7 of their papers we have counts for
7 papers
Antidot superlattices in two-dimensional topological insulators
Haolin Huang, Jackson S. Smith, Fabio Taddei +2
We investigate the electronic properties of a two-dimensional topological insulator patterned with an array of circular holes. The band structures of the topological insulator supe…
Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices
Md. Mamunur Rahman, Ensar Vahapoglu, Kok Wai Chan +16
We systematically investigate the interplay between materials engineering, quantum transport, and low-frequency charge noise in silicon metal--oxide--semiconductor (SiMOS) quantum…
A Depinning Model for Josephson Junction Tuning
Oscar W. Kennedy, Jared H. Cole, Connor D. Shelly
Building more powerful quantum computers requires manufacturing processes with tight tolerances. To improve the tolerances on Josephson junctions, techniques to fine tune their pro…
The influence of pinholes and weak-points in aluminium-oxide Josephson junctions
K. Bayros, M. J. Cyster, J. S. Smith +1
Josephson junctions are the key components used in superconducting qubits for quantum computing. The advancement of quantum computing is limited by a lack of stability and reproduc…
The effect of atomic structure on the electrical response of aluminium oxide tunnel junctions
M. J. Cyster, J. S. Smith, J. A. Vaitkus +3
Many nanoelectronic devices rely on thin dielectric barriers through which electrons tunnel. For instance, aluminium oxide barriers are used as Josephson junctions in superconducti…
Depinning of disordered bosonic chains
Nicolas Vogt, Jared H. Cole, Alexander Shnirman
We consider one-dimensional bosonic chains with a repulsive boson-boson interaction that decays exponentially on large length-scales. This model describes transport of Cooper-pairs…
Electronic transport in Si:P delta-doped wires
J. S. Smith, D. W. Drumm, A. Budi +3
Despite the importance of Si:P delta-doped wires for modern nanoelectronics, there are currently no computational models of electron transport in these devices. In this paper we pr…