2 papers
physics.app-ph2019
Strain engineering in Ge/GeSn core/shell nanowires
Simone Assali, Marco Albani, Roberto Bergamaschini +6
Strain engineering in Sn-rich group IV semiconductors is a key enabling factor to exploit the direct band gap at mid-infrared wavelengths. Here, we investigate the effect of strain…
cond-mat.mes-hall2016
InSb Nanowires with Built-In GaxIn1-xSb Tunnel Barriers for Majorana Devices
Diana Car, Sonia Conesa-Boj, Hao Zhang +12
Majorana zero modes (MZMs), prime candidates for topological quantum bits, are detected as zero bias conductance peaks (ZBPs) in tunneling spectroscopy measurements. Implementation…