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researcher

M. Verheijen

4 papers hereh-index 10343 citations36 works total

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • middle author3

Across the 3 of 4 papers where every author was matched, so the position is known.

fields
  • cond-mat.mes-hall2
  • cond-mat.mtrl-sci1
  • physics.app-ph1
same name
  • M. Verheijen — 80 papers, h 39
  • M. Verheijen — 31 papers, h 66
  • M. Verheijen — 13 papers, h 5
  • M. Verheijen — 8 papers, h 5
  • M. Verheijen — 3 papers, h 3

Either other researchers who publish under this name, or the same person where the external sources have not merged their records.

identity via Semantic Scholar / OpenAlex

activity
20192026
most citedStrain engineering in Ge/GeSn core/shell nanowires

33 citations · 33 across the 3 of their papers we have counts for

collaborators

4 papers

cond-mat.mes-hall2026

Induced superconductivity in selective-area grown SnTe devices

Maarten J. G. Kamphuis, Yoran F. S. Starmans, Pim J. H. Lueb +9

Topological superconductors are of high interest for applications in topological quantum computation. The required topologically superconducting state can be engineered by proximit…

cond-mat.mes-hall2025

Quantum transport in SnTe nanowire devices

Femke J. Witmans, Mathijs G. C. Mientjes, Maarten J. G. Kamphuis +9

We report on a variety of quantum transport experiments in SnTe nanowire devices. Research on these particular nanowire devices is relevant because of their topological properties…

cond-mat.mtrl-sci2024

Understanding the anisotropic growth of VS grown PbSnTe nanowires

Mathijs G. C. Mientjes, Xin Guan, Marcel A. Verheijen +1

PbSnTe is a topological crystalline insulator (TCI), which holds promise for scattering-free transport channels and fault-tolerant quantum computing. As the topologically non-trivi…

physics.app-ph2019★ 33 cited

Strain engineering in Ge/GeSn core/shell nanowires

Simone Assali, Marco Albani, Roberto Bergamaschini +6

Strain engineering in Sn-rich group IV semiconductors is a key enabling factor to exploit the direct band gap at mid-infrared wavelengths. Here, we investigate the effect of strain…

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Not affiliated with arXiv. Researcher data from Semantic Scholar (ODC-BY) and OpenAlex.