113 citations · 342 across the 11 of their papers we have counts for
11 papers
Self-regulated radius of spontaneously formed GaN nanowires in molecular beam epitaxy
Sergio Fernández-Garrido, Vladimir M. Kaganer, Karl K. Sabelfeld +5
We investigate the axial and radial growth of GaN nanowires upon a variation of the Ga flux during molecular beam epitaxial growth. An increase in the Ga flux promotes radial growt…
Carrier diffusion in GaN -- a cathodoluminescence study. III: Nature of nonradiative recombination at threading dislocations
Jonas Lähnemann, Vladimir M. Kaganer, Karl K. Sabelfeld +5
We investigate the impact of threading dislocations with an edge component (a or a+c-type) on carrier recombination and diffusion in GaN(0001) layers close to the surface as well a…
Carrier diffusion in GaN -- a cathodoluminescence study. II: Ambipolar vs. exciton diffusion
Oliver Brandt, Vladimir M. Kaganer, Jonas Lähnemann +8
We determine the diffusion length of excess carriers in GaN by spatially resolved cathodoluminescence spectroscopy utilizing a single quantum well as carrier collector or carrier s…
Carrier diffusion in GaN -- a cathodoluminescence study. I: Temperature-dependent generation volume
Uwe Jahn, Vladimir M. Kaganer, Karl K. Sabelfeld +8
The determination of the carrier diffusion length of semiconductors such as GaN and GaAs by cathodoluminescence imaging requires accurate knowledge about the spatial distribution o…
Determination of the carrier diffusion length in GaN from cathodoluminescence maps around threading dislocations: fallacies and opportunities
Vladimir M. Kaganer, Jonas Lähnemann, Carsten Pfüller +3
We investigate, both theoretically and experimentally, the drift, diffusion, and recombination of excitons in the strain field of an edge threading dislocation intersecting the GaN…
Piezoelectric field, exciton lifetime, and cathodoluminescence intensity at threading dislocations in GaN{0001}
Vladimir M. Kaganer, Karl K. Sabelfeld, Oliver Brandt
The strain field of a dislocation emerging at a free surface is partially relaxed to ensure stress free boundary conditions. We show that this relaxation strain at the outcrop of e…
Ga-polar (In,Ga)N/GaN quantum wells vs. N-polar (In,Ga)N quantum disks in GaN nanowires: Comparative analysis of carrier recombination, diffusion, and radiative efficiency
F. Feix, T. Flissikowski, K. K. Sabelfeld +5
We investigate the radiative and nonradiative recombination processes in planar (In,Ga)N/GaN(0001) quantum wells and (In,Ga)N quantum disks embedded in GaN nanowires…
Dislocation contrast in cathodoluminescence and electron-beam induced current maps on GaN(0001)
K. K. Sabelfeld, V. M. Kaganer, C. Pfüller +1
We theoretically analyze the contrast observed at the outcrop of a threading dislocation at the GaN(0001) surface in cathodoluminescence and electron-beam induced current maps. We…
A stochastic model and Monte Carlo algorithm for fluctuation-induced H formation on the surface of interstellar dust grains
Karl Sabelfeld
A stochastic algorithm for simulation of fluctuation-induced kinetics of H formation on grain surfaces is suggested as a generalization of the technique developed in our recent…
Investigating the origin of the nonradiative decay of bound excitons in GaN nanowires
Christian Hauswald, Pierre Corfdir, Johannes K. Zettler +9
We investigate the origin of the fast recombination dynamics of bound and free excitons in GaN nanowire ensembles by temperature-dependent photoluminescence spectroscopy using both…
Ostwald ripening of faceted two-dimensional islands
V. M. Kaganer, W. Braun, K. K. Sabelfeld
We study Ostwald ripening of two-dimensional adatom and advacancy islands on a crystal surface by means of kinetic Monte Carlo simulations. At large bond energies the islands are s…