113 citations · 113 across the 1 of their papers we have counts for
8 papers
Self-regulated radius of spontaneously formed GaN nanowires in molecular beam epitaxy
Sergio Fernández-Garrido, Vladimir M. Kaganer, Karl K. Sabelfeld +5
We investigate the axial and radial growth of GaN nanowires upon a variation of the Ga flux during molecular beam epitaxial growth. An increase in the Ga flux promotes radial growt…
Carrier diffusion in GaN -- a cathodoluminescence study. III: Nature of nonradiative recombination at threading dislocations
Jonas Lähnemann, Vladimir M. Kaganer, Karl K. Sabelfeld +5
We investigate the impact of threading dislocations with an edge component (a or a+c-type) on carrier recombination and diffusion in GaN(0001) layers close to the surface as well a…
Carrier diffusion in GaN -- a cathodoluminescence study. II: Ambipolar vs. exciton diffusion
Oliver Brandt, Vladimir M. Kaganer, Jonas Lähnemann +8
We determine the diffusion length of excess carriers in GaN by spatially resolved cathodoluminescence spectroscopy utilizing a single quantum well as carrier collector or carrier s…
Carrier diffusion in GaN -- a cathodoluminescence study. I: Temperature-dependent generation volume
Uwe Jahn, Vladimir M. Kaganer, Karl K. Sabelfeld +8
The determination of the carrier diffusion length of semiconductors such as GaN and GaAs by cathodoluminescence imaging requires accurate knowledge about the spatial distribution o…
Determination of the carrier diffusion length in GaN from cathodoluminescence maps around threading dislocations: fallacies and opportunities
Vladimir M. Kaganer, Jonas Lähnemann, Carsten Pfüller +3
We investigate, both theoretically and experimentally, the drift, diffusion, and recombination of excitons in the strain field of an edge threading dislocation intersecting the GaN…
Piezoelectric field, exciton lifetime, and cathodoluminescence intensity at threading dislocations in GaN{0001}
Vladimir M. Kaganer, Karl K. Sabelfeld, Oliver Brandt
The strain field of a dislocation emerging at a free surface is partially relaxed to ensure stress free boundary conditions. We show that this relaxation strain at the outcrop of e…