252 citations · 490 across the 10 of their papers we have counts for
5 papers · 1 filter
Superconducting Proximity Effect in Two-Dimensional Hole Gases
Serafim S. Babkin, Benjamin Joecker, Karsten Flensberg +2
Technology involving hybrid superconductor-semiconductor materials is a promising avenue for engineering quantum devices for information storage, manipulation, and transmission. Pr…
Engineering local strain for single-atom nuclear acoustic resonance in silicon
Laura A. O'Neill, Benjamin Joecker, Andrew D. Baczewski +1
Mechanical strain plays a key role in the physics and operation of nanoscale semiconductor systems, including quantum dots and single-dopant devices. Here we describe the design of…
Full configuration interaction simulations of exchange-coupled donors in silicon using multi-valley effective mass theory
Benjamin Joecker, Andrew D. Baczewski, John K. Gamble +3
Donor spin in silicon have achieved record values of coherence times and single-qubit gate fidelities. The next stage of development involves demonstrating high-fidelity two-qubit…
Coherent electrical control of a single high-spin nucleus in silicon
Serwan Asaad, Vincent Mourik, Benjamin Joecker +12
Nuclear spins are highly coherent quantum objects. In large ensembles, their control and detection via magnetic resonance is widely exploited, e.g. in chemistry, medicine, material…
Electron spin relaxation of single phosphorus donors in metal-oxide-semiconductor nanoscale devices
Stefanie B. Tenberg, Serwan Asaad, Mateusz T. Mądzik +12
We analyze the electron spin relaxation rate of individual ion-implanted P donors, in a large set of metal-oxide-semiconductor (MOS) silicon nanoscale devices, with…