3 papers
cond-mat.mtrl-sci2026
Why Do Thick MOCVD-Grown beta-Ga2O3 Epilayers on (001) Substrates Crack: Crystallographic Origin
Martin Frentrup, Indraneel Sanyal, Dan Lamb +5
Thick, defect free epitaxial layers grown using industry standard techniques are a fundamental requirement for the widespread adoption of fully vertical power devices based on ultr…
cond-mat.mtrl-sci2025
A cascade model for the defect-driven etching of porous GaN distributed Bragg reflectors
Ben Thornley, Maruf Sarkar, Saptarsi Ghosh +4
Fabrication of porous GaN distributed Bragg reflectors (DBRs) via the selective electrochemical etching (ECE) of conductive Si-doped layers, separated by non-intentionally doped (N…
physics.app-ph2024
Buffer-less Gallium Nitride High Electron Mobility Heterostructures on Silicon
Saptarsi Ghosh, Martin Frentrup, Alexander M. Hinz +5
Thick metamorphic buffers are perceived to be indispensable for the heteroepitaxial integration of III-V semiconductors on silicon substrates with large thermal expansion and latti…