Hsien-Lien Huang

activity

20192025

most citedUnusual Formation of Point Defect Complexes in the Ultra-wide Band Gap Semiconductor beta-Ga2O3

107 citations · 117 across the 7 of their papers we have counts for

collaborators

7 papers

physics.app-ph2025★ 7 cited

Electrical and Structural Properties of In-Situ MOCVD Grown Al $_{2}$ O $_{3}$ / $β$ -Ga $_{2}$ O $_{3}$ and Al $_{2}$ O $_{3}$ / $β$ -(Al $_{x}$ Ga $_{1 - x}$ ) $_{2}$ O $_{3}$ MOSCAPs

A F M Anhar Uddin Bhuiyan, Lingyu Meng, Dong Su Yu +6

This study investigates the electrical and structural properties of MOSCAPs with in-situ MOCVD-grown Al $_{2}$ O $_{3}$ dielectrics on (010) $β$ -Ga $_{2}$ O $_{3}$ and $β$ -(Al $_{x}$ Ga $_{1 - x}$ ) $_{2}$ …

cond-mat.mtrl-sci2023

Metalorganic Chemical Vapor Deposition of \b{eta}-(AlxGa1-x)2O3 thin films on (001) \b{eta}-Ga2O3 substrates

A. F. M. Anhar Uddin Bhuiyan, Lingyu Meng, Hsien-Lien Huang +5

Phase pure \b{eta}-(AlxGa1-x)2O3 thin films are grown on (001) oriented \b{eta}-Ga2O3 substrates via metalorganic chemical vapor deposition (MOCVD). By systematically tuning the pr…

cond-mat.mtrl-sci2022★ 3 cited

Ultra-Wide Bandgap Ga $_{2}$ O $_{3}$ -on-SiC MOSFETs

Yiwen Song, Arkka Bhattacharyya, Anwarul Karim +8

Ulta-wide bandgap semiconductors based on $β$ -Ga $_{2}$ O $_{3}$ offer the potential to achieve higher power switching performance, efficiency, and lower manufacturing cost than today's w…

cond-mat.mtrl-sci2022

In-situ MOCVD Growth and Band Offsets of Al $_{2}$ O $_{3}$ Dielectric on $β$ -Ga $_{2}$ O $_{3}$ and $β$ -(Al $_{x}$ Ga $_{1 - x}$ ) $_{2}$ O $_{3}$ thin films

A F M Anhar Uddin Bhuiyan, Lingyu Meng, Hsien-Lien Huang +2

The in-situ metalorganic chemical vapor deposition (MOCVD) growth of Al $_{2}$ O $_{3}$ dielectrics on $β$ -Ga $_{2}$ O $_{3}$ and $β$ -(Al $_{x}$ Ga $_{1 - x}$ ) $_{2}$ O $_{3}$ films is investigated as a funct…

cond-mat.mtrl-sci2022

MOCVD growth and band offsets of \k{appa}-phase Ga2O3 on sapphire, GaN, AlN and YSZ substrates

A F M Anhar Uddin Bhuiyan, Zixuan Feng, Hsien-Lien Huang +3

Epitaxial growth of \k{appa}-phase Ga2O3 thin films are investigated on c-plane sapphire, GaN- and AlNon-sapphire, and (100) oriented yttria stabilized zirconia (YSZ) substrates vi…

cond-mat.mtrl-sci2021

Planar and 3-dimensional damage free etching of $β$ -Ga2O3 using atomic gallium flux

Nidhin Kurian Kalarickal, Andreas Fiedler, Sushovan Dhara +7

In-situ etching using Ga flux in an ultra-high vacuum environment like MBE is introduced as a method to make high aspect ratio 3 dimensional structures in $β$ -Ga2O3. Etching of $β$ …

cond-mat.mtrl-sci2019★ 107 cited

Unusual Formation of Point Defect Complexes in the Ultra-wide Band Gap Semiconductor beta-Ga2O3

Jared M. Johnson, Zhen Chen, Joel B. Varley +10

Understanding the unique properties of ultra-wide band gap semiconductors requires detailed information about the exact nature of point defects and their role in determining the pr…

Electrical and Structural Properties of In-Situ MOCVD Grown Al2​O3​/β-Ga2​O3​ and Al2​O3​/β-(Alx​Ga1−x​)2​O3​ MOSCAPs