24 citations · 82 across the 7 of their papers we have counts for
7 papers
Development and Application of a ReaxFF Reactive Force Field for Ni-Doped MoS
Karen Mohammadtabar, Enrique Guerrero, Sergio Romero Garcia +4
The properties of can be tuned or optimized through doping. In particular, Ni doping has been shown to improve the performance of for various appl…
Atomistic Mechanisms of Sliding in Few-Layer and Bulk Doped MoS
Enrique Guerrero, David A. Strubbe
Sliding of two-dimensional materials is critical for their application as solid lubricants for space, and also relevant for strain engineering and device fabrication. Dopants such…
Structure, Thermodynamics, and Raman Spectroscopy of Rhenium-Doped Bulk MoS from First Principles
Enrique Guerrero, David A. Strubbe
Doping MoS with Re is known to alter the electronic, structural, and tribological properties. Re-doped MoS has been previously mainly studied in monolayer or few-layer form…
Phase Stability and Raman/IR Signatures of Ni-Doped MoS from Density-Functional Theory Studies
Enrique Guerrero, Rijan Karkee, David A. Strubbe
Ni-doped MoS is a layered material with useful tribological, optoelectronic, and catalytic properties. Experiment and theory on doped MoS has focused mostly on monolayers o…
Enhanced interlayer interactions in Ni-doped MoS, and structural and electronic signatures of doping site
Rijan Karkee, Enrique Guerrero, David A. Strubbe
The crystal structure of MoS with strong covalent bonds in plane and weak Van der Waals interactions out of plane gives rise to interesting properties for applications such as…
Intercalation Leads to Inverse Layer Dependence of Friction on Chemically Doped MoS_{2}
Ogulcan Acikgoz, Enrique Guerrero, Alper Yanilmaz +4
We present results of atomic-force-microscopy-based friction measurements on Re-doped molybdenum disulfide (MoS2). In stark contrast to the widespread observation of decreasing fri…
Computational generation of voids in -Si and -Si:H by cavitation at low density
Enrique Guerrero, David A. Strubbe
Use of amorphous silicon (-Si) and hydrogenated amorphous silicon (-Si:H) in photovoltaics has been limited by light-induced degradation (the Staebler-Wronski effect) and low…