2 papers
cond-mat.str-el2019
Electric bias-controlled switching of magnetization of ferrimagnetically coupled Mn delta-layers in a GaAs-AlGaAs quantum well
N. V. Agrinskaya, A. M. Kalashnikova, V. I. Kozub
We suggest a model of synthetic ferrimagnetic semiconductor structure based on GaAs-AlGaAs quantum well doped by two Mn delta-layers. The coupling between the delta-layers is media…
cond-mat.dis-nn2015
Temperature-dependent disorder and magnetic field driven disorder: experimental observations for doped GaAs/AlGaAs quantum well structures
N. V. Agrinskaya, V. A. Berezovets, V. I. Kozub
We report experimental studies of conductance and magnetoconductance of GaAs/AlGaAs quantum well structures where both wells and barriers are doped by acceptor impurity Be. Tempera…