9 citations · 27 across the 7 of their papers we have counts for
7 papers
Electric bias-controlled switching of magnetization of ferrimagnetically coupled Mn delta-layers in a GaAs-AlGaAs quantum well
N. V. Agrinskaya, A. M. Kalashnikova, V. I. Kozub
We suggest a model of synthetic ferrimagnetic semiconductor structure based on GaAs-AlGaAs quantum well doped by two Mn delta-layers. The coupling between the delta-layers is media…
Temperature-dependent disorder and magnetic field driven disorder: experimental observations for doped GaAs/AlGaAs quantum well structures
N. V. Agrinskaya, V. A. Berezovets, V. I. Kozub
We report experimental studies of conductance and magnetoconductance of GaAs/AlGaAs quantum well structures where both wells and barriers are doped by acceptor impurity Be. Tempera…
Suppression of the virtual Anderson transition in a narrow impurity band of doped quantum well structures
N. V. Agrinskaya, V. I. Kozub, D. S. Poloskin
Earlier we reported an observation at low temperatures of activation conductivity with small activation energies in strongly doped uncompensated layers of p-GaAs/AlGaAs quantum wel…
Slow relaxations of magnetoresistance in AlGaAs-GaAs quantum well structures quenched in a magnetic field
N. V. Agrinskaya, V. I. Kozub, D. V. Shamshur +2
We observed a slow relaxation of magnetoresistance in response to applied magnetic field in selectively doped p-GaAs-AlGaAs structures with partially filled upper Hubbard band. We…
Magnetoresistance in semiconductor structures with hopping conductivity: effects of random potential and generalization for the case of acceptor states
N. V. Agrinskaya, V. I. Kozub, A. V. Shumilin +1
We reconsider the theory of magnetoresistance in hopping semiconductors. First, we have shown that the random potential of the background impurities affects significantly preexpone…
Comment on "Weak localization in GaMnAs: evidence of impurity band transport" by L. P. Rokhinson et. al. (Phys. Rev. B, 76, 161201 R; arXivCond-mat:0707.2416)
N. V. Agrinskaya, V. I. Kozub
We suggest that negative magnetoresistance in small magnetic fields at temperatures lower than 3 K reported in the paper under discussion may be related to superconducting transiti…
Photoluminescence and transport in selectively doped p-GaAs/AlGaAs quantum wells: manifestation of the upper Hubbard band
N. V. Agrinskaya, Yu. L. Ivanov, P. V. Petrov +1
By selective doping (Be) of the well and barrier regions of p-GaAs/AlGaAs structures we have realized the situation where the upper Hubbard band (A+ centers) has been occupied by h…