104 citations · 151 across the 6 of their papers we have counts for
4 papers · 1 filter
Channel-last gate-all-around nanosheet oxide semiconductor transistors
Fabia F. Athena, Xiangjin Wu, Nathaniel S. Safron +18
As we move beyond the era of transistor miniaturization, back-end-of-line-compatible transistors that can be stacked monolithically in the third dimension promise improved performa…
Gate Dielectric Engineering with an Ultrathin Silicon-oxide Interfacial Dipole Layer for Low-Leakage Oxide-Semiconductor Memories
Fabia F. Athena, Jonathan Hartanto, Matthias Passlack +11
We demonstrate a gate dielectric engineering approach leveraging an ultrathin, atomic layer deposited (ALD) silicon oxide interfacial layer (SiL) between the amorphous oxide semico…
Size scaling, dynamics, and electro-thermal bifurcation of VO2 Mott oscillators
Stephanie M. Bohaichuk, Suhas Kumar, Miguel Muñoz Rojo +7
Traditional electronic devices are well-known to improve in speed and energy-efficiency as their dimensions are reduced to the nanoscale. However, this scaling behavior remains unc…
Localized Triggering of the Insulator-Metal Transition in VO2 using a Single Carbon Nanotube
Stephanie M. Bohaichuk, Miguel Muñoz Rojo, Gregory Pitner +8
Vanadium dioxide (VO2) has been widely studied for its rich physics and potential applications, undergoing a prominent insulator-metal transition (IMT) near room temperature. The t…