activity
19992005
most citedInterface optical phonons in spheroidal dots: Raman selection rules

64 citations · 80 across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.mes-hall2005

Confined polar optical phonons in semiconductor double heterostructures: an improved continuum approach

F. Comas, I. Camps, N. Studart +1

Confined polar optical phonons are studied in a semiconductor double heterostructure (SDH) by means of a generalization of a theory developed some years ago and based on a continuo…

cond-mat.mes-hall2003★ 16 cited

Electron-phonon interaction in quantum-dot/quantum-well semiconductor heterostructures

F. Comas, Nelson Studart

Polar optical phonons are studied in the framework of the dielectric continuum approach for a prototypical quantum-dot/quantum-well (QD/QW) heterostructure, including the derivatio…

cond-mat.mes-hall2001★ 64 cited

Interface optical phonons in spheroidal dots: Raman selection rules

F. Comas, C. Trallero-Giner, Nelson Studart +1

The contribution of interface phonons to the first order Raman scattering in nanocrystals with non spherical geometry is analyzed. Interface optical phonons in the spheroidal geome…

cond-mat.mtrl-sci2000

High field transport in strained Si/GeSi double heterostructure: a Fokker-Planck approach

F. Comas, Nelson Studart

We report calculations of high electric field transport for the case of a strained Si/GeSi double heterostructure (DHS) considering transport along the Si channel and by applying t…

cond-mat1999

High-field transport properties of bulk Si: A test for the Fokker-Planck approach

F. Comas, Nelson Studart

High electric-field transport parameters are calculated using an analytical Fokker-Planck approach (FPA), where transport is modeled as a drift-diffusion process in energy space. W…