activity
20172026
most citedThickness Dependence of the Physical Properties of Atomic-Layer Deposited Al2O3

27 citations · 84 across the 8 of their papers we have counts for

collaborators

9 papers

cond-mat.mtrl-sci2026

Engineering Correlated Transparent Conductors via Metal-Insulator Transition Proximity

Amit Cohen, Nofar Tuval, Maria Baskin +5

Transparent conductors are key functional materials in modern optoelectronic devices. Their performance is governed by an inherent trade-off between optical transparency and electr…

cond-mat.mtrl-sci2025

Real-time Observation of Thermal Surface Recovery in

Amit Cohen, Jonathan Ludwick, Ward Yahya +4

(SVO), a model correlated metal and a promising transparent conducting oxide, develops a several-nanometer-thick near-surface region (NSR), rich in species under…

cond-mat.str-el2024★ 2 cited

Charge gain via solid-state gating of an oxide Mott system

Lishai Shoham, Itai Silber, Gal Tuvia +10

The modulation of channel conductance in field-effect transistors (FETs) via metal-oxide-semiconductor (MOS) structures has revolutionized information processing and storage. Howev…

cond-mat.mtrl-sci2023★ 4 cited

The impact of the near-surface region on the interpretation of x-ray absorption spectroscopy

Lishai Shoham, Maria Baskin, Yaron Kauffmann +5

Transition metal oxides (TMOs) exhibit a broad spectrum of electronic, magnetic, and optical properties, making them intriguing materials for various technological applications. So…

cond-mat.str-el2023★ 10 cited

Bandwidth Control and Symmetry Breaking in a Mott-Hubbard Correlated Metal

Lishai Shoham, Maria Baskin, Tom Tiwald +10

In Mott materials strong electron correlation yields a spectrum of complex electronic structures. Recent synthesis advancements open realistic opportunities for harnessing Mott phy…

physics.app-ph2022★ 12 cited

Scalable Conductive Oxide Interfaces as Defect Reservoirs for Resistive Switching Devices

Yang Li, Wei Wang, Di Zhang +5

Resistive switching devices herald a transformative technology for memory and computation, offering considerable advantages in performance and energy efficiency. Here we employ a s…

physics.app-ph2019★ 18 cited

Understanding Leakage Currents through on

Dror Miron, Igor Krylov, Maria Baskin +2

Leakage currents through insulators received continuous attention for decades, owing to their importance for a wide range of technologies, and interest in their fundamental mechani…

cond-mat.mtrl-sci2018★ 27 cited

Thickness Dependence of the Physical Properties of Atomic-Layer Deposited Al2O3

Yael Etinger-Geller, Ekaterina Zoubenko, Maria Baskin +2

Inspired by nature, we investigate the short-range order effect on the physical properties of amorphous materials. Amorphous Al2O3 thin films exhibit a higher proportion of their 4…

cond-mat.mtrl-sci2017★ 11 cited

Band offsets at amorphous-crystalline oxide interfaces

Dana Cohen-Azarzar, Maria Baskin, Lior Kornblum

2D electron gases (2DEGs) formed at oxide interfaces provide a rich testbed for fundamental physics and device applications. While the discussion of the physical origins of this ph…