21 citations · 22 across the 2 of their papers we have counts for
2 papers
cond-mat.mtrl-sci2024★ 1 cited
Ferrimagnetic Heusler tunnel junctions with fast spin-transfer torque switching enabled by low magnetization
Chirag Garg, Panagiotis Ch. Filippou, Ikhtiar +10
Magnetic random access memory that uses magnetic tunnel junction memory cells is a high performance, non-volatile memory technology that goes beyond traditional charge-based memori…
cond-mat.mtrl-sci2019★ 21 cited
Current-Induced magnetization switching by the high spin Hall conductivity -W
Wei-Bang Liao, Tian-Yue Chen, Yari Ferrante +2
The spin Hall effect originating from 5d heavy transition metal thin films such as Pt, Ta, and W is able to generate efficient spin-orbit torques that can switch adjacent magnetic…