activity
20182020
most citedA rhombohedral ferroelectric phase in epitaxially-strained Hf0.5Zr0.5O2 thin films

593 citations · 738 across the 6 of their papers we have counts for

collaborators

6 papers

cond-mat.mes-hall2020★ 12 cited

Unified Framework for Charge-Spin Interconversion in Spin-Orbit Materials

Shehrin Sayed, Seokmin Hong, Xiaoxi Huang +5

Materials with spin-orbit coupling are of great interest for various spintronics applications due to the efficient electrical generation and detection of spin-polarized electrons.…

cond-mat.mtrl-sci2020★ 9 cited

Dynamic Tilting of Ferroelectric Domain Walls via Optically Induced Electronic Screening

Youngjun Ahn, Arnoud S. Everhardt, Hyeon Jun Lee +8

Optical excitation perturbs the balance of phenomena selecting the tilt orientation of domain walls within ferroelectric thin films. The high carrier density induced in a low-strai…

physics.app-ph2020★ 29 cited

On the key role of oxygen vacancies electromigration in the memristive response of ferroelectric devices

C. Ferreyra, M. Rengifo, M. J. Sánchez +3

Ferroelectric memristors are intensively studied due to their potential implementation in data storage and processing devices. In this work we show that the memristive behavior of…

cond-mat.mtrl-sci2019★ 53 cited

BaTiO3 thin films as transitional ferrroelectrics with giant dielectric response

A. S. Everhardt, T. Denneulin, A. Gruenebohm +9

Proximity to phase transitions (PTs) is frequently responsible for the largest dielectric susceptibilities in ferroelectrics. The impracticality of using temperature as a control p…

cond-mat.mtrl-sci2019★ 42 cited

Periodicity doubling cascades: direct observation in ferroelastic materials

Arnoud S. Everhardt, Silvia Damerio, Jacob A. Zorn +6

Very sensitive responses to external forces are found near phase transitions. However, phase transition dynamics and pre-equilibrium phenomena are difficult to detect and control.…

cond-mat.mtrl-sci2018★ 593 cited

A rhombohedral ferroelectric phase in epitaxially-strained Hf0.5Zr0.5O2 thin films

Yingfen Wei, Pavan Nukala, Mart Salverda +10

After decades of searching for robust nanoscale ferroelectricity that could enable integration into the next generation memory and logic devices, hafnia-based thin films have appea…